• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A thyristor, with at least four zones of alternating opposite conductivity types, in which the first and fourth zones are contacted by the main electrodes and act as emitter zones, the second zone adjoins the first zone, and the third zone of lowest doping lies between the second and fourth zones. Both the second and the third zones together with the forward blocking PN-junction formed between them extend to the surface of the thyristor semiconductor chip on the side with the first zone. The portion of the forward blocking PN-junction reaching the surface can be irradiated with light so as to trigger the thyristor. There is provided in the surface a highly doped zone of the conductivity type of the first zone, which is connected with the second zone by an electrical contact on the surface. The part of the third zone extending to the surface encloses part of the second zone and the highly doped zone. The electrical contact connects the highly doped zone with the part of the second zone lying outside the region of the second zone enclosed by the third zone at the surface.
    公开号:SU793421A3
    申请号:SU772487355
    申请日:1977-05-30
    公开日:1980-12-30
    发明作者:Ситтиг Роланд；Де Брюйен Патрик
    申请人:Ббц Аг Браун；Боверн Унд Ко. (Фирма)；
    IPC主号:
    专利说明:

    (54) FOT The invention relates to photo thyristors based on a four-layer structure with alternating conductivity type. Photo thyristor structures are known based on a four-layer planar structure with a photodiode formed in the base region fi. Also known is the photothyristor, which is the closest in its technical essence, which is made on the basis of a four-layer structure with the main and auxiliary parts of the thyristor structure, the P-base region being low-alloyed, and the heavily doped emitter zone is electrically connected to the p-base 2. However further optimization of the structure is possible, controlled by a smaller light power. The aim of the invention is to reduce the necessary for igniting the light power with increasing stability with respect to dU / dt. The goal is solved in a photo thyristor on the basis of a four-layer structure with an alternating type of conductivity, having a main and auxiliary part of the thyristor structure, ISTOR; S P V. 2 .., with the first and fourth zones being emitters and in contact with the main electrodes, while the most highly doped conduction type region of the first zone is electrically connected to the p-base, the low-alloyed fn-base projects to the surface of the structure and surrounds the parts of the p-vase and heavily doped Zones of the P-type conductivity, while the heavily-doped areas of the -type have electrical contact with a part of the p-baei not surrounded by the h-base region. As a result, the resulting photocurrent is concentrated in one or several areas, and at low light power a very high current density is obtained, which can cause the thyristor to ignite. In FIG. 1 shows the proposed thyristor in section, in which the high-alloyed zone of the type of conductivity of the first zone lies in the aperture of the protruding part of the third in FIG. 2 - the same, top view; in fig. 3 is a top view of a thyristor, in which a protruding part of the third zone is made in the form of a spiral curve: in Fig. 4, a thyristor, in a section, in which a protrusion on the surface of the part of the third zone is closed; figure 5 is the same, top view. The thyristor contains the first eon. 1 of the p-type of conductivity — the main emitter, the second zone 2 -p-the thyristor base, the third zone 3 -h-the thyristor base, the fourth zone 4 of the f-type conductivity with a near-surface high-doped region; - pn junction 5, reverse-biased p-j junction 6, surface 7 of thyristor structure, holes 8, high-alloyed region — type 9, shunt contact 10, high-alloyed p-region 11, strip p -conductivity type 12, part of p-base forming parallel strips 13, emitter shunts 14, p-type region conductance 15, dielectric 16, metallization 1. Presented in FIG. 1 and 2, the thyristor contains the first zone doped with an impurity of the h type and thereby acts as a p-emitter zone. It contacts the cathode C. The second call 2 is doped with p-type impurity and in the usually lit through the control electrode the thyristor contacts by him. The third doped n-type impurity zone 3 has the smallest doping of all the zones, and in particular serves to receive the barrier layer, which is formed in the forward direction in the ph lock-up transition 5 and in the opposite direction in the stopping p-rt junction 6. A quarter, The p-type doped dopant zone 4 has a high-doped region on the front side, which is catalyzed with anode A and acts as a p-emitter zone. On the surface 7 of the semiconductor thyristor structure, a highly doped n-type impurity zone 9 is provided, which with a highly doped p-type impurity region 11 forms a p - (T junction, which is bridged by an electrical contact 10. Zone 9 acts in this best known way as a n - auxiliary thyristor emitter, which, after its ignition, supplies the control current for igniting the main thyristor. The thyristor projecting on the surface 7 of the semiconductor structure forms part of the third zone 3, with one station the h-type areas with holes 8, and on the other hand, the strips 13 that pass pargglelically to each other; and the области-light zone 9 is located in the hole 8, and forms with n-type areas highly doped with an r-type impurity, a ring of region 11 of zone 2, shunt by an electrical contact of the 10 p + n junction. A bless, gift to the described special structure of g-zone 3 on surface 7, formed by light radiation L to the surface High current flows in high concentration through hole 8 to cathode C, and Through zone 9 located in the opening 8, acting as the emitter zone of the auxiliary thyristor, it lights up the auxiliary thyristor, which, for its part, lights the main thyristor, p-region 11 contributes to the fact that the control current generated as a result of ignition of the auxiliary thyristor however, it is distributed over the entire volume of the zone of the main emitter 1, and as a result, a fast ignition of the thyristor over the entire cross section is achieved. Of great importance is the fact that the possibility of a easier ignition of the structure of the thyristor, made according to the invention, is achieved not at the expense of the smaller value of the slope of the critical voltage dU / o | b, which was to be feared. This is due to the fact that the capacitance per unit surface with the structure of the thyristor according to the invention in an unexpected way is clearly less in the photosensitive region than on the undisturbed pn junction, and beyond that dU / dt. sensitivity decreases with high direct blocking voltages. It is only for this reason that the local current density formed by the structure according to the invention does not lead to premature switching on. The described structure of the thyristor according to the invention is particularly advantageous because on the surface 7 of the semiconductor structure of the thyristor there are provided between the bands 13, respectively p bands 12., which are connected to the same band doped and transposed between them and the zone 9 between them. The wasps 12 corresponding to the n-bands 13 cause a decrease in the ohmic resistance for the hole hole 5 formed on the surface of the pn-junction and direct it across the passing p-band, which then, in some way as a busbar, acts on the whole expansion to the opposite part of zone 9 of the auxiliary thyristor. The curve formed by the p-base region, in principle, can also have more than just one hole with zone 9 respectively located in it, however, one hole is particularly advisable because of the resulting high hole concentration. The circular shape of the p base extending to the surface and region 11 and the central location of this configuration in the circular recess of the cathode C is advantageous, since this makes the thyristor easier with respect to the choice of its parameters. The zone 9 expanded inwardly to the curve and, accordingly, the wide shape and opposite placement across the passing n-band create a particularly intensive interaction of these two parts with each other. The manufacture of the thyristor according to the invention is not a problem. For example, in a h-doped silicon substrate with a resistivity of 200 ohms and a thickness of 800 μm in the first diffusion process, for example, zones 2 and 4 with a depth of 90 μm can be made, with the regions of the h-type bands, zone 9 and zones 1 are protected from diffusion by a diffusion mask. After this, with continuous coverage of these areas and, additionally, the surface area of zone 2 create areas 11. Finally, with the help of an appropriate mask, both zone 1 and area 9 diffuse. -Region 11 and n-zone 1 and region 9 have, for example, a penetration depth 15 microns. The width of the strips 3 is, for example, 3 mm, the diameter of the ring 11, for example, 4 mm, the width of the hole 8, for example, 1 mm, the diameter of the circular recess in the emitter zone 1, for example 5.5 mm. The length of the whole thyristor is, for example, 14 mm. The emitter shunts 14, for example, have an average distance of 1-2 mm from each other and are distributed in a known manner throughout the cathode. The calculated element thus blocks the voltage, for example, 4.5 kV and can, for example, at 1 kV This blocking voltage can be ignited by means of a GaAS light emitting diode (950 nm) with a light power of 5 mW. Critical cruise. dll / dt voltage at room temperature is better than 3000 V / µs (measured according to DIN 41 7871). The special advantages of this thyristor are not only the lower light power required for ignition, but also the fact that the quantum yield through the region of the spectrum from about 540 to about 1000 nm is almost equal to 1, so that a large number of light sources can be used. The light power required for ignition is largely independent of the corresponding blocking voltage at which the ignition is performed. Good dU / dt strength is guaranteed, and moreover the tyrior is to a large extent also protected from damage due to foam stress, therefore, it is extremely stable to ignition, since bending of a direct p-p junction 5 in the photosensitive range causes a decrease in avalanche voltage. robo, so that when overvoltage, the arrister lights up., starting from this area, therefore cannot be damaged throughout its entire volume. The photosensitive surface of an alternative thyristor made in accordance with the invention is shown in FIG. 3 of this thyristor. The designations have the same meaning as the thyristor in FIGS. 1 and 2, but it differs from it in that the h-base region extends beyond the surface is shaped like a spiral and has only a long and narrow bore as an aperture, and that a particularly high-alloyed region 9 is now completely enclosed in a surrounded spiral region of n-type. For a thyristor with such a structure, the electrical contact 10 must be brought out through the n-region 3 but isolated from it. This insulation is made predominantly by an oxide layer with a thickness of about 1 micron. This layer is applied by oxidation inside the closed area 11. Above the - area 9, which is to be contacted, the window is then etched in the oxide layer. The oxide layer serves not only as an insulation, but also at the same time as a passivation layer for the photosensitive structure and also reduces the light loss resulting from reflections on the silicon surface. This thyristor has the following principle of operation. If the light is radiated to region 3, then the hole current through a relatively high resistance (at an appropriate dimension with a kangsha length of about 4 mm and a channel width of about 0.2 mm of an opening 8 of about 3 kΩ) of the narrow and long opening 8 must flow to the cathode D. As a result of this, the region of the p-alloy zone 2, which is located entirely within the P base, is delivered to a potential that is higher than its surroundings. This is especially true in relation to the p-region 9, which by means of a shunt contact 10 is superimposed on the potential of the p-region 11. The potential difference of about 0.6 to ti region 9 pumps electrons and the thyristor is ignited. Such a thyristor with particular benefit can be ignited with a minimum light power, since ohmic-. The resistance increases significantly between the strips 12 and 11 respectively as a result of the selection of a particularly long and narrow opening 8 in the n-type region. Although, in principle, this can also be achieved by a particularly small ditch of the opening 8 of the thyristor (Figures 1 and 2, however, as a result, it is extremely difficult to diffuse and metallize the contact of the 10 n region 9 in such a narrow opening. Therefore, along with the spiral shape of the zone 3 curve if necessary, another form may also be advantageously used, which has a long and narrow opening 8.
    A third embodiment of the thyristor according to the invention is shown in FIG. 4 .and 5. It differs in that the protruding part of the third zone forms a closed curve that does not cover the first zone, and that this curve covers the -dried area 9, as well as the p -digged area 15, the p -legged area 15. Through the metallization 17 is connected to the cathode metallization. Do structured in this way. thyristor contact 10 and metallization 17 should be brought out through the p-area, but be isolated relative to it. This insulation is in the thyristor (Fig. 3 is preferably achieved by a dielectric 16 1 µm thick, which is applied by oxidation within region 11. Over the ti - areas: areas 9 and 15 that must be in contact, the oxide layer is then wiped out of the window.
    This thyristor has a principle of operation, which is schematically depicted in figure 4. studying the light, a current c is fed, which through the resistance T. corresponding to the opening 8 at the thyristors in Figures 1, 2 and 3 flows to the cathode. As a result of this current, the potential of the entire p-doped zone 2 lying within the region increases to a higher potential compared to its surroundings. This is especially true for the h-region 9, which by metallization 10 is applied to the potential of the p-region 11, the T-region 9 injects electrons at a potential difference of about 0.6 V.
    权利要求:
    Claims (14)
    [1]
    1. A photothyristor containing at least four zones of alternating conductivity type having main and auxiliary thyristor structures, the first and fourth zones of which are in contact with the main electrodes and are emitters, and the second and fourth bases with different types of conductivity, and low alloy base has a h-type conductivity, characterized in that, in order to reduce the light power required to ignite while increasing the stability dU / dt j
    The low-alloyed g-base protrudes onto the surface of the structure and surrounds parts of the p-base and heavily doped And-type regions, and the heavily doped P-type region is electrically connected to the part of the p-base not surrounded by the h-base region.
    [2]
    2. Photo thyristor POP.1, characterized in that the fi-base area emerging to the surface
     the structure has an area not adjacent to the emitter in which the heavily doped region of conductivity is located.
    [3]
    3. The photo thyristor according to claim 2, characterized in that (1 base
    5, the region is made up of parallel strips extending onto the surface of the structure.
    [4]
    4. The photo thyristor according to section 3, distinguished by the fact that between
    parallel bands of the n-base region are p-type conduction bands with a higher concentration,. than the connecting transverse stripe joining them.
    [5]
    5. Photo thyristor on PP. 2-4, which implies that the | i -basic region that goes to the surface of the structure is surrounded by a closed ring
     p-type conductivity, but with a higher concentration than the p-base.
    [6]
    6. The photo thyristor on PP.3-5, about the TL. And the fact that the h-base coming to the surface is made
    in the form of a ring and contains a region in which the heavily doped p region is located, extending towards the center of the structure.
    [7]
    7. Photo thyristor on PP. 2-5, characterized in that the area
    0 and-bases, emerging on the surface, is made in the form of a spiral, moreover, the heavily doped n-area lies completely in the area covered by the spiral,
    [8]
    8. Photo thyristor POP.1, about t l and supposing that the n-base region on the surface forms a closed, non-enveloping emitter region.
    [9]
    9. The photo thyristor of claim 8, about tl and Q due to the fact that the region
    The conductivity h -THrja, the part of the p-base, and the p-type region of the conductivity lie within the h-base region extending to the surface.
    [10]
    10. Photo thyristor on PP. 8 and 9, due to the fact that
    The P base, emerging on the surface, has a comb structure.
    [11]
    11. The photo thyristor according to claims 1-10, characterized in that in the region of the p-base emerging on the surface of the structure and the dielectric located above it, a part of the p-base comes to the surface.
    [12]
    12. Photo thyristor according to claims 5-7 and 11, 5 characterized in that
    inside the ring of p-type dielectric is made.
    [13]
    13. Photo thyristor according to claims 9-11, which is indicated by the fact that a window is made in the dielectric above the p + -type region.
    [14]
    14. Photo thyristor on PP. 9-11 and 13 characterized in that between the high-alloyed p-region
    and the main electrode is made by shunting,
    Priority on PP.: O.06.76. To PP. 1-6 04.15.77 according to claims 7-14.
    Sources of information taken into account in the examination
    1. Ambroe to A, - Designs and technologists of semiconductor photovoltaic devices M., Soviet Radio, 1970, Ch. nineteen.
    2. The patent of Germany 2008079,
    cl. 21 g 11/02, publ. 1977 (prototype).
    P l U
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    优先权:
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